kta2015 transistor (pnp) features power dissipation p cm: 0.1 w (tamb=25 ) collector current i cm: -0.5 a collector-base voltage v (br)cbo : -35 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -35 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -35 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 a h fe(1) v ce = -1 v, i c = -100 ma 70 240 dc current gain h fe(2) v ce = -6 v, i c = -400 ma o y 25 40 collector-emitter saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma -0.25 v base-emitter voltage v be v ce = -1 v, i c = -100 ma -1 v transition frequency f t v ce = -6 v, i c = -20 ma 200 mhz collector output capacitance c ob v cb = -6 v, i e =0, f= 1 mhz 13 pf classification of h fe(1) rank o y range 70-140 120-240 marking zo zy sot-323 1. base 2. emitter 3. collector kta2015 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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